Shell structure and electron-electron interaction in self-assembled InAs quantum dots

Shell structure and electron-electron interaction in self-assembled InAs quantum dots

Using far-infrared spectroscopy, we investigate the excitations of selforganized InAs quantum dots as a function of the electron number per dot, 1 ≤ ne ≤ 6, which is monitored in situ by capacitance spectroscopy. Whereas the well-known two-mode spectrum is observed when the lowest (s-) states are filled, we find a rich excitation spectrum for ne ≥ 3, which reflects the importance of electron-el...

FEW ELECTRON QUANTUM DOTS IN InAs/InP CORE SHELL NANOWIRES

Fröhlich interaction in InAs/GaAs self-assembled quantum dots

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Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots.

New information on the electron-hole wave functions in InAs-GaAs self-assembled quantum dots is deduced from Stark effect spectroscopy. Most unexpectedly it is shown that the hole is localized towards the top of the dot, above the electron, an alignment that is inverted relative to the predictions of all recent calculations. We are able to obtain new information on the structure and composition...

Electron localization by self-assembled GaSbÕGaAs quantum dots

We have studied the photoluminescence from type-II GaSb/GaAs self-assembled quantum dots in magnetic fields up to 50 T. Our results show that at low laser power, electrons are more weakly bound to the dots than to the wetting layer, but that at high laser power, the situation is reversed. We attribute this effect to an enhanced Coulomb interaction between a single electron and dots that are mul...